A group of researchers led by Germany’s Karlsruher Institut für Technologie (KIT) has fabricated a triple-junction perovskite-perovskite-silicon solar cell that achieved a record-breaking efficiency of 24.4%.
The triple-junction cell is based on a perovskite top cell with an energy bandgap of 1.84 eV, a perovskite middle cell with bandgap of 1.52 eV, and a silicon bottom cell with a bandgap of 1.1 eV. The device achieved an open-circuit voltage of 2.84 V, a short-circuit current of 11.6 mA cm–2, and a fill factor of 74%.
The cell was also able to retain 96.6% of the initial efficiency in dark storage aging at 85 C for 1,081 h.